smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SC3233 features excellent switching times t r =1.0s (max.) tf=1.0s (max.) at i c =0.8a high colletor breakdown voltage: v ceo =400v absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 500 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 7v collector current i c 2a base current i b 0.5 a total power dissipation ta = 25 1w t c =25 20 w junction temperature t j 150 storage temperature t stg -55to+150 p c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =400v,i e =0 100 a emitter cutoff current i ebo v eb =7v,i c =0 1 ma emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 500 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 400 v v ce =5v,i c =0.1a 20 v ce =5v,i c =1a 8 collector-emitter saturation voltage v ce(sat) i c =0.1a,i b =0.2a 1 v base- emitter voltage v be(sat) i c =0.1a,i b =0.2a 1.5 v switching time turn-0n time tr 1.0 s switching storage time tstg 2.5 s switching fall time tf 1 s h fe dc current gain smd type smd type smd type smd type product specification sales@twtysemi.com 1of 1 http://www.twtysemi.com 4008-318-123
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